| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 45.0 A |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 26 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 2.8 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 45.0 A, 45.0 mA |
| Rise Time | 101 ns |
| Input Capacitance (Ciss) | 1725pF @25V(Vds) |
| Input Power (Max) | 2.4 W |
| Fall Time | 106 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.4 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.29 mm |
| Size-Width | 4.83 mm |
| Size-Height | 11.05 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The NTB45N06T4G is a N-channel Power MOSFET designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
● Higher current rating
● Lower RDS (ON)
● Lower VDS (ON)
● Lower capacitances
● Lower total gate charge
● Tighter VSD specification
● Lower diode reverse recovery time
● Lower reverse recovery stored charge
● -55 to 175°C Operating temperature range
ON Semiconductor
7 Pages / 0.13 MByte
ON Semiconductor
26 Pages / 0.29 MByte
ON Semiconductor
2 Pages / 0.02 MByte
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