| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -15.5 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.143 Ω |
| Polarity | P-Channel |
| Power Dissipation | 65 W |
| Input Capacitance | 1.19 nF |
| Gate Charge | 26.0 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 15.5 A |
| Rise Time | 90 ns |
| Input Capacitance (Ciss) | 1190pF @25V(Vds) |
| Input Power (Max) | 65 W |
| Fall Time | 70 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 65W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Looking for a component that can both amplify and switch between signals within your circuit? The NTD20P06LG power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 65000 mW. This product comes in rail packaging to keep individual parts separated and protected. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
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