| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -12.0 A |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.155 Ω |
| Polarity | P-Channel |
| Power Dissipation | 55 W |
| Threshold Voltage | 2.8 V |
| Input Capacitance | 750 pF |
| Gate Charge | 30.0 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 12.0 A |
| Rise Time | 45 ns |
| Input Capacitance (Ciss) | 750pF @25V(Vds) |
| Input Power (Max) | 55 W |
| Fall Time | 48 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 55 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The NTD2955G is a -60V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. The MOSFET is ideal for low voltage, high speed switching applications in power supplies, converters and power motor controls. It is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
● Avalanche energy specified
● AEC-Q101 qualified
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