| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 800 V |
| Current Rating | 5.50 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 51 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 3.30 A, 5.50 A |
| Rise Time | 65 ns |
| Input Capacitance (Ciss) | 1310pF @25V(Vds) |
| Input Power (Max) | 51 W |
| Fall Time | 44 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 51W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.16 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.19 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FQPF6N80C is a 800V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
● Low gate charge
● 100% Avalanche tested
● Improved system reliability in PFC and soft switching topologies
● Switching loss improvements
● Lower conduction loss
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