| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 68 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 71 W |
| Threshold Voltage | 2.2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 19.0 A |
| Rise Time | 16 ns |
| Input Capacitance (Ciss) | 1000pF @25V(Vds) |
| Input Power (Max) | 71 W |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 71W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The NTD6416ANLT4G is a N-channel Power MOSFET offers 100V drain source voltage and 19A continuous drain current.
● Lower RDS (ON)
● High current capability
● 100% Avalanche tested
● -55 to 175°C Operating junction temperature range
ON Semiconductor
8 Pages / 0.21 MByte
ON Semiconductor
8 Pages / 0.22 MByte
ON Semiconductor
5 Pages / 0.03 MByte
ON Semiconductor
1 Pages / 0.03 MByte
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