NTB25P06T4G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-263-3
Description:	ON SEMICONDUCTOR NTB25P06T4G MOSFET Transistor, P Channel, -27.5A, -60V, 70mohm, -10V, -2.8V
Documentation:	NTB25P06T4G Datasheet (6 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on5 Page Package Footprint Pad Layout on5 Page Part Numbering System on1 Page 6 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTB25P06T4G Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Voltage Rating (DC)	-60.0 V
Current Rating	-25.0 A
Case/Package	TO-263-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.07 Ω
Polarity	P-Channel
Power Dissipation	120 W
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Gate to Source)	±15.0 V
Continuous Drain Current (Ids)	27.5 A
Rise Time	72 ns
Input Capacitance (Ciss)	1680pF @25V(Vds)
Input Power (Max)	120 W
Fall Time	190 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	120 W