NTD80N02-1G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-251-3
Description:	IPAK N-CH 24V 80A
Documentation:	NTD80N02-1G Datasheet (8 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on6 Page 7 Page 8 Page Package Footprint Pad Layout on6 Page Part Numbering System on1 Page 5 Page 8 Page NTD80N02-1G Application Note (12 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTD80N02-1G Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Voltage Rating (DC)	24.0 V
Current Rating	80.0 A
Case/Package	TO-251-3
Drain to Source Resistance (on) (Rds)	5.00 mΩ
Polarity	N-Channel
Power Dissipation	75 W
Drain to Source Voltage (Vds)	24 V
Breakdown Voltage (Drain to Source)	24.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	80.0 A
Rise Time	67 ns
Input Capacitance (Ciss)	2600pF @20V(Vds)
Input Power (Max)	75 W
Fall Time	40 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	75W (Tc)