| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -5.20 A |
| Case/Package | TO-261-4 |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | P-Channel |
| Power Dissipation | 3.13 W |
| Threshold Voltage | 1.75 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 5.20 A, 5.00 A |
| Rise Time | 33.0 ns |
| Input Capacitance (Ciss) | 950pF @25V(Vds) |
| Input Power (Max) | 1.56 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.56W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTF5P03T3G is a P-channel Power MOSFET offers -30V drain source voltage and -5.2A continuous drain current. It is suitable for DC-to-DC converters, inductive loads and replaces MMFT5P03HD.
● Ultra-low RDS (ON)
● Higher efficiency extending battery life
● Logic level gate drive
● Miniature surface-mount package
● Avalanche energy specified
● -55 to 150°C Operating temperature range
ON Semiconductor
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ON Semiconductor
9 Pages / 0.47 MByte
ON Semiconductor
9 Pages / 0.53 MByte
ON Semiconductor
Power MOSFET -30V -5A 100mOhm Single P-Channel SOT-223, SOT-223 (TO-261) 4 LEAD, 4000-REEL
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