NTJS3151PT2G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	SC-88-6
Description:	Single P-Channel 12V 60mOhm 8.6NC 625mW Trench Power Mosfet - SOT-363
Documentation:	NTJS3151PT2G Datasheet (5 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on5 Page Package Footprint Pad Layout on5 Page Part Numbering System on1 Page 4 Page 5 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTJS3151PT2G Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	6 Pin
Voltage Rating (DC)	-12.0 V
Current Rating	-2.70 A
Case/Package	SC-88-6
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	133 mΩ
Polarity	P-Channel
Power Dissipation	625 mW
Input Capacitance	850 pF
Gate Charge	8.60 nC
Drain to Source Voltage (Vds)	12 V
Breakdown Voltage (Drain to Source)	12 V
Breakdown Voltage (Gate to Source)	±12.0 V
Continuous Drain Current (Ids)	2.70 A
Rise Time	1.5 ns
Input Capacitance (Ciss)	850pF @12V(Vds)
Input Power (Max)	625 mW
Fall Time	3.9 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625mW (Ta)