| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | UDFN-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.16 Ω |
| Power Dissipation | 500 mW |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 32.3 ns |
| Input Capacitance (Ciss) | 300pF @10V(Vds) |
| Input Power (Max) | 500 mW |
| Fall Time | 74 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.6 mm |
| Size-Width | 1.6 mm |
| Size-Height | 0.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Make an effective common source amplifier using this NTLUD3A260PZTAG power MOSFET from ON Semiconductor. Its maximum power dissipation is 800 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
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Small Signal MOSFET -20V -1.7A 200mOhm Dual P-Channel uDFN6, UDFN6, 1.6x1.6, 0.5P Dual Flag, 3000-REEL
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