| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -12.0 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 156 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.4 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 700 pF |
| Gate Charge | 14.0 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 12.0 A |
| Rise Time | 41 ns |
| Input Capacitance (Ciss) | 700pF @25V(Vds) |
| Input Power (Max) | 2.4 W |
| Fall Time | 45 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 2.4W (Ta), 62.5W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.28 mm |
| Size-Width | 4.82 mm |
| Size-Height | 9.28 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
| Minimum Packing Quantity | 50 |
P-Channel 60V 2.4A (Ta) 2.4W (Ta), 62.5W (Tc) Through Hole TO-220AB
ON Semiconductor
5 Pages / 0.07 MByte
ON Semiconductor
26 Pages / 0.08 MByte
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