| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -8.00 V |
| Current Rating | -3.70 A |
| Case/Package | SOT-23-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.039 Ω |
| Polarity | P-Channel |
| Power Dissipation | 960 mW |
| Threshold Voltage | 1 V |
| Input Capacitance | 1173 pF |
| Drain to Source Voltage (Vds) | 8 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 3.70 A |
| Rise Time | 15.75 ns |
| Input Capacitance (Ciss) | 1173pF @4V(Vds) |
| Input Power (Max) | 960 mW |
| Fall Time | 31 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 960 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.01 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTR2101PT1G is a P-channel Small-signal MOSFET offers -8V drain source voltage and -3.7A continuous drain current. It is suitable for DC-to-DC converters, high side load switch, cellular phone, notebook, PDAs.
● Leading Trench technology for low RDS (ON)
● -1.8V Rated for low voltage gate drive
● Surface-mount for small footprint (3 x 3mm)
● -55 to 150°C Operating junction temperature range
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