| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -8.00 V |
| Current Rating | -1.40 A |
| Case/Package | SOT-323-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | P-Channel |
| Power Dissipation | 290 mW |
| Threshold Voltage | 700 mV |
| Drain to Source Voltage (Vds) | 8 V |
| Breakdown Voltage (Drain to Source) | 8 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 1.40 A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 640pF @8V(Vds) |
| Input Power (Max) | 290 mW |
| Fall Time | 18 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 290mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.2 mm |
| Size-Width | 1.24 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTS2101PT1G is a P-channel Power MOSFET offers -8V drain source voltage and -1.4A continuous drain current. It is suitable for high side load switch, charging circuit, single cell battery applications such as cell phones, digital cameras and PDAs.
● Leading Trench technology for low RDS (ON) extending battery life
● -1.8V Rated for low voltage gate drive
● Surface-mount for small footprint (2 x 2mm)
● -55 to 150°C Operating junction temperature range
ON Semiconductor
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ON Semiconductor
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ON Semiconductor
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