| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -1.37 A |
| Case/Package | SOT-323-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.12 Ω |
| Polarity | P-Channel |
| Power Dissipation | 329 mW |
| Threshold Voltage | 640 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 1.37 A |
| Rise Time | 14.9 ns |
| Input Capacitance (Ciss) | 840pF @20V(Vds) |
| Input Power (Max) | 329 mW |
| Fall Time | 18 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 329 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.2 mm |
| Size-Width | 1.35 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NTS4101PT1G is a P-channel Power MOSFET offers -20V drain source voltage and -1.37A continuous drain current. It is suitable for use in high side load switch, charging circuit, single cell battery applications such as cell phones, digital cameras and PDAs.
● Leading -20V Trench for low RDS (ON)
● -2.5V Rated for low voltage gate drive
● Surface-mount for small footprint (2 x 2mm)
● -55 to 150°C Operating junction temperature range
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Small Signal MOSFET -20V -1.37A 120mOhm Single P-Channel SC-70
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Small Signal MOSFET -20V -1.37A 120mOhm Single P-Channel SC-70, SC-70 (SOT-323) 3 LEAD, 3000-REEL
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