| TYPE | DESCRIPTION |
|---|
| Number of Pins | 5 Pin |
| Case/Package | SO-8FL |
| Number of Positions | 5 Position |
| Drain to Source Resistance (on) (Rds) | 0.0023 Ω |
| Power Dissipation | 166 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 80 V |
| Rise Time | 74 ns |
| Input Capacitance (Ciss) | 4120pF @40V(Vds) |
| Fall Time | 19 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
●Features | | Benefits
●---|---|---
● | | | | |
● Small Footprint (5x6 mm)
●| |
● Compact Design
● Low RDS(on)
●| |
● Minimize Conduction Losses
● Low QG and Capacitance
●| |
● Minimize Driver Losses
● Wettable Flank Option
●| |
● Enhanced Optical Inspection
● AEC−Q101 Qualified
●| |
● Automotive qualified
● Pb−Free
●| |
● RoHS Compliant
ON Semiconductor
3 Pages / 0.01 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
Power MOSFET 80V, 2.8mW, 157A, Single N-Channel
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