| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | TO-46-2 |
| Forward Voltage | 2 V |
| Wavelength | 890 nm |
| Viewing Angle | 18° |
| Peak Wavelength | 890 nm |
| Power Dissipation | 200 W |
| Rise Time | 500 ns |
| Test Current | 10 mA |
| Forward Current | 100 mA |
| Maximum Forward Voltage (Max) | 2 V |
| Forward Current (Max) | 100 mA |
| Fall Time | 250 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 6.35 mm |
| Size-Height | 5.59 mm |
| Lead Length | 12.7 mm |
| Operating Temperature | -65℃ ~ 125℃ (TA) |
The OP233 is a gallium aluminium arsenide (GaAIAs) Infrared Emitting Diode, mounted in a hermetic metal housing. The gallium aluminium arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. The device is lensed to provide a narrow beam angle (18°) between half power points. The 890nm wavelength closely matches the spectral response of silicon phototransistors.
● Focused and non-focused optical light pattern
● Enhanced temperature range
● Mechanically and spectrally matched to other OPTEK devices
TT Electronics/Optek Technology
6 Pages / 0.52 MByte
TT Electronics/Optek Technology
6 Pages / 0.33 MByte
TT Electronics/Optek Technology
3 Pages / 0.04 MByte
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