TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 2 Pin |
Case/Package | T-1 |
Power Rating | 333 mW |
Forward Voltage | 2 V |
Wavelength | 890 nm |
Viewing Angle | 50° |
Peak Wavelength | 890 nm |
Power Dissipation | 1110 W |
Rise Time | 500 ns |
Test Current | 10 mA |
Forward Current | 150 mA |
Maximum Forward Voltage (Max) | 2 V |
Forward Current (Max) | 150 mA |
Fall Time | 250 ns |
Operating Temperature (Max) | 100 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 1110 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Each |
Size-Height | 8.64 mm |
Lead Length | 19.1 mm |
Operating Temperature | -40℃ ~ 100℃ (TA) |
Housing Material | Plastic |
The OP291A is a gallium aluminium arsenide Infrared Light Emitting Diode (LED) moulded in an IR-transmissive package. It comes with a wavelength cantered at 890nm, which closely matches the spectral response of silicon phototransistors.
● Higher power output than GaAs at equivalent LED
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