TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 2 Pin |
Case/Package | T-1 |
Number of Positions | 2 Position |
Wavelength | 935 nm |
Viewing Angle | 25° |
Peak Wavelength | 935 nm |
Polarity | NPN |
Power Dissipation | 0.1 W |
Power Consumption | 100 mW |
Breakdown Voltage (Collector to Emitter) | 15 V |
Input Power (Max) | 100 mW |
Operating Temperature (Max) | 100 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 100 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Operating Temperature | -40℃ ~ 100℃ (TA) |
The OP535A is a Silicon NPN Photodarlington moulded in a green plastic package. The narrow receiving angle provides excellent on-axis coupling. This device is 1 00% production tested using infrared light for close correlation with Optek GaAs and GaAIAs emitters. Photodarlington device is normally used in applications where light signal levels are low and more current gain is needed than is possible with phototransistors.
● Narrow receiving angle
● High current gain
● Small package size for space limited applications
● 0.050" (1.27mm) Lead spacing
TT Electronics/Optek Technology
2 Pages / 0.29 MByte
TT Electronics/Optek Technology
11 Pages / 1.61 MByte
TT Electronics/Optek Technology
2 Pages / 0.05 MByte
TT Electronics/Optek Technology
2 Pages / 0.29 MByte
TT Electronics/Optek Technology
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TT Electronics
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