| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Drain to Source Voltage (Vds) | 600 V |
| Input Capacitance (Ciss) | 900pF @25V(Vds) |
| Input Power (Max) | 35 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
Description
●The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
●■ 100% avalanche tested
●■ High dv/dt and avalanche capabilities
●■ Low input capacitance and gate charge
●■ Low gate input resistance
●■ Tight process control and high manufacturing yields
●Applications
●■ Switching application
ST Microelectronics
17 Pages / 0.43 MByte
ST Microelectronics
N-channel 650V @ T Jmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET
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ST Microelectronics
N-channel 650V @ T Jmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET
ETC
N-channel 650V @ T Jmax - 0.4Ω - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET
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