TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | SOT-223 |
Number of Positions | 4 Position |
Polarity | NPN |
Power Dissipation | 730 mW |
Breakdown Voltage (Collector to Emitter) | 400 V |
Continuous Collector Current | 1A |
hFE Min | 100 |
DC Current Gain (hFE) | 155 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.45 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Cut Tape (CT) |
Size-Length | 6.7 mm |
Size-Width | 3.7 mm |
Size-Height | 1.8 mm |
The PBHV8140Z is a 1A NPN breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink.
● High voltage
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● AEC-Q101 qualified
● PNP complement is PBHV9540Z
● V8140Z Marking code
Nexperia
Trans GP BJT NPN 400V 1A 1450mW Automotive 4Pin(3+Tab) SC-73
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