| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-223 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 730 mW |
| Breakdown Voltage (Collector to Emitter) | 150 V |
| Continuous Collector Current | 2A |
| hFE Min | 100 |
| DC Current Gain (hFE) | 240 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.45 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.8 mm |
The PBHV8215Z is a 2A NPN breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink.
● High voltage
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● AEC-Q101 qualified
● PNP complement is PBHV9215Z
● V8215Z Marking code
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