TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 300 mW |
Breakdown Voltage (Collector to Emitter) | 400 V |
Continuous Collector Current | 0.25A |
hFE Min | 80 @100mA, 10V |
hFE Max | 100 @50mA, 10V |
Input Power (Max) | 300 mW |
DC Current Gain (hFE) | 200 |
Operating Temperature (Max) | 150 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | 150℃ (TJ) |
The PBHV9040T,215 is a 0.25A PNP breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package.
● High voltage
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● AEC-Q101 qualified
● NPN complement is PBHV8540T
● W5 Marking code
NXP
206 Pages / 0.21 MByte
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