| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 125 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-89-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 550 mW |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 4A |
| hFE Min | 150 @2A, 2V |
| hFE Max | 200 @0.5A, 2V |
| Input Power (Max) | 1.6 W |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Height | 1.6 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS5480X,135 is a 4A PNP breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. It offers collector pad for good heat transfer.
● High hFE and low VCEsat at high current operation
● High efficiency leading to less heat generation
● NPN complement is PBSS4480X
● 1Z Marking code
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