| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SC-75-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 150 mW |
| Breakdown Voltage (Collector to Emitter) | 15 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 150 @100mA, 2V |
| hFE Max | 200 @10mA, 2V |
| Input Power (Max) | 250 mW |
| DC Current Gain (hFE) | 90 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 150℃ (TJ) |
The PBSS2515E,115 is a 0.5A NPN breakthrough-in small signal (BISS) Transistor in an ultra-small surface-mount plastic package.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● High efficiency due to less heat generation
● Smaller required printed-circuit board (PCB) area than for conventional transistors
● PNP complement is PBSS3515E
● 1Q Marking code
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