| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-89-3 |
| Power Rating | 0.6 W |
| Number of Positions | 3 Position |
| Power Dissipation | 600 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 150 @4A, 2V |
| Input Power (Max) | 2.5 W |
| DC Current Gain (hFE) | 500 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.6 mm |
| Size-Width | 2.6 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS4041NX is a 6.2A NPN breakthrough-in small signal (BISS) Transistor in a medium power and flat lead surface-mount plastic package. It offers die pad for good heat transfer.
● Very low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● High energy efficiency due to less heat generation
● Smaller required printed-circuit board (PCB) area than for conventional transistors
● AEC-Q101 qualified
● PNP complement is PBSS4041PX
● %6F Marking code
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