| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 110 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Power Rating | 2.6 W |
| Number of Positions | 4 Position |
| Power Dissipation | 2.6 W |
| Rise Time | 60 ns |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 200 @2A, 2V |
| Input Power (Max) | 2.6 W |
| DC Current Gain (hFE) | 300 |
| Fall Time | 100 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2600 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.8 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS4041PZ is a 5.7A PNP breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package with increased heat-sink.
● Very low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● High energy efficiency due to less heat generation
● Smaller required printed-circuit board (PCB) area than for conventional transistors
● AEC-Q101 qualified
● NPN complement is PBSS4041NZ
● PB4041PZ Marking code
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