| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 220 MHz |
| Number of Pins | 6 Pin |
| Case/Package | SC-74-6 |
| Power Rating | 0.56 W |
| Number of Positions | 6 Position |
| Power Dissipation | 700 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 200 @500mA, 5V |
| Input Power (Max) | 420 mW |
| DC Current Gain (hFE) | 500 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 700000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.1 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS4160DS,115 is a dual NPN breakthrough small signal (BISS) Bipolar Transistor Array in a surface-mount plastic package. It is suitable for dual low power switch applications. It utilizes required smaller printed-circuit board (PCB) area than for conventional transistors.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● High efficiency due to less heat generation
● PBSS5160DS dual PNP complement
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