| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Power Rating | 0.27 W |
| Number of Positions | 3 Position |
| Power Dissipation | 270 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 200 @500mA, 5V |
| Input Power (Max) | 400 mW |
| DC Current Gain (hFE) | 400 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | 150℃ (TJ) |
The PBSS4160T is a 1A NPN breakthrough-in small signal (BISS) Transistor in a plastic package. It is suitable for use with the driver in low supply voltage applications and inductive load drivers.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High efficiency, reduces heat generation
● Reduces printed-circuit board area required
● PNP complement is PBSS5160T
● U5 Marking code
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