| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-223 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 1.35 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 3A |
| hFE Min | 200 |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Operating Temperature | -65℃ ~ 150℃ |
The PBSS4350Z is a NPN low VCEsat Transistor housed in a surface-mount plastic package. It offers collector pad for good heat transfer.
● Low collector-emitter saturation voltage
● High collector current capabilities of IC and ICM
● High collector current gain (hFE) at high IC
● Higher efficiency leading to less heat generation
● Reduced PCB area requirements compared to DPAK
● PNP complement is PBSS5350Z
● PB4350 Marking code
Philips
50V low VCEsat NPN transistor
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