| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 14.0 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 420 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 190 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 14.0 A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 2650pF @25V(Vds) |
| Input Power (Max) | 190 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 190W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | 150℃ (TJ) |
The STP16NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The new SuperMESH™ Power MOSFETS is the result of further design improvements on ST"s well-established strip based PowerMESH™ layout. In addition to significantly lower ON-resistance, the device offers superior dV/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ device further complements an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products.
● 100% Avalanche tested
● Very low intrinsic capacitance
ST Microelectronics
15 Pages / 0.72 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
4 Pages / 0.01 MByte
ST Microelectronics
1 Pages / 0.12 MByte
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