| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 270 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 1A |
| hFE Min | 100 |
| DC Current Gain (hFE) | 350 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1.25 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The PBSS5160T is a 1A PNP breakthrough-in small signal (BISS) Transistor in a small surface-mount plastic package.
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High efficiency due to less heat generation
● Reduces printed-circuit board (PCB) area required
● NPN complement is PBSS4160T
● U6 Marking code
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