TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | SOT-223 |
Number of Positions | 4 Position |
Drain to Source Resistance (on) (Rds) | 0.2 Ω |
Polarity | N-Channel |
Power Dissipation | 6.9 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 100 V |
Input Capacitance (Ciss) | 300pF @25V(Vds) |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 6900 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Size-Length | 6.7 mm |
Size-Width | 3.7 mm |
Size-Height | 1.7 mm |
The PHT4NQ10T is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™ technology. It is suitable for use in primary side switch in DC to DC converters, high speed line driver and fast general purpose switch applications.
● Very fast switching
● Surface-mount package
● -65 to 150°C Junction temperature range
Nexperia
MOSFET N-CH 100V 3.5A SOT223
NXP
Trans MOSFET N-CH 100V 3.5A 4Pin(3+Tab) SC-73 T/R
NXP
Single N-Channel 100V 575mOhm 7.4NC 6.9W Silicon SMT Mosfet - SOT-223
NXP
NXP PHT4NQ10T MOSFET Transistor, N Channel, 3.5A, 100V, 0.2Ω, 10V, 3V
NXP
N-channel TrenchMOS logic level FET
Nexperia
Trans MOSFET N-CH 100V 3.5A Automotive 4Pin(3+Tab) SC-73 T/R
Nexperia
Trans MOSFET N-CH 100V 3.5A 4Pin(3+Tab) SC-73
Nexperia
Trans MOSFET N-CH 100V 3.5A 4Pin(3+Tab) SC-73
Philips
N-channel enhancement mode field-effect transistor
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.