| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 20 V |
| Continuous Collector Current | 2A |
| hFE Min | 150 |
| DC Current Gain (hFE) | 225 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 0.48 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The PBSS5220T is a 2A PNP breakthrough-in small signal (BISS) Transistor in a plastic package offering ultra-low VCEsat and RCEsat parameters.
● Low collector-emitter saturation voltage VCEsat
● High collector current capabilities of IC and ICM
● Higher efficiency leading to less heat generation
● Reduced printed-circuit board requirements
● 3F Marking code
Nexperia
Small Signal Bipolar Transistor
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