| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 500 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 4 A |
| Case/Package | PowerSO-10RF |
| Polarity | N-Channel |
| Power Dissipation | 52.8 W |
| Drain to Source Voltage (Vds) | 25 V |
| Continuous Drain Current (Ids) | 4.00 A |
| Output Power | 3 W |
| Gain | 12 dB |
| Test Current | 50 mA |
| Input Capacitance (Ciss) | 59pF @7.5V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 52800 mW |
| Voltage Rating | 25 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
Amplifying and switching electronic signals fast and reliably can be done with this PD54003-E RF amplifier from STMicroelectronics specified for radio frequency environments. Its maximum power dissipation is 52800 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
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