| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 500 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 2.5 A |
| Case/Package | PowerSO-10RF |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 31.7 W |
| Drain to Source Voltage (Vds) | 40 V |
| Breakdown Voltage (Drain to Source) | 40 V |
| Continuous Drain Current (Ids) | 2.50 A |
| Output Power | 3 W |
| Gain | 17 dB |
| Test Current | 50 mA |
| Input Capacitance (Ciss) | 36pF @12.5V(Vds) |
| Operating Temperature (Max) | 165 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 31700 mW |
| Voltage Rating | 40 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 7.5 mm |
| Size-Width | 9.4 mm |
| Size-Height | 3.5 mm |
| Operating Temperature | -65℃ ~ 165℃ |
The PD55003-E is a N-channel RF Power Transistor designed for high gain, broad band applications. It operates at 12V in common source mode at frequencies of up to 1GHz. It boasts excellent gain, linearity and reliability thanks to ST"s latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for car mobile radios. It has been optimized for RF requirements and offers excellent RF performance and ease of assembly.
● Excellent thermal stability
● Common source configuration
● Enhancement-mode lateral field-effect transistor
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