TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 500 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 40.0 V |
Current Rating | 2.5 A |
Case/Package | PowerSO-10RF |
Power Dissipation | 31.7 W |
Drain to Source Voltage (Vds) | 40 V |
Continuous Drain Current (Ids) | 2.50 A |
Output Power | 3 W |
Gain | 17 dB |
Test Current | 50 mA |
Input Capacitance (Ciss) | 36pF @12.5V(Vds) |
Operating Temperature (Max) | 165 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 31700 mW |
Voltage Rating | 40 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 7.5 mm |
Size-Width | 9.4 mm |
Size-Height | 3.5 mm |
Operating Temperature | -65℃ ~ 165℃ |
Using semiconductor technology, this PD55003S-E RF amplifier from STMicroelectronics operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 31700 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.
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