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PD57006
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PD57006 Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:BJTs
Case Package:PowerSO-10RF
Description:STMICROELECTRONICS PD57006 RF FET Transistor, 65V, 1A, 20W, 925MHz, 960MHz, PowerSO-10RF
Documentation:PD57006 Datasheet (22 Pages)Pinout Diagram on1 PageHot
Package Outline Dimension on16 Page17 Page18 Page19 Page20 Page
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PD57006 Datasheet PDF (22 Pages)
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PD57006 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins10 Pin
Supply Voltage (DC)28.0 V
Case/PackagePowerSO-10RF
PolarityN-Channel
Power Dissipation20 W
Drain to Source Voltage (Vds)65 V
Breakdown Voltage (Drain to Source)65.0 V
Breakdown Voltage (Gate to Source)±20.0 V
Continuous Drain Current (Ids)1.00 A
Output Power6.00 W
Input Capacitance (Ciss)27pF @28V(Vds)
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-65 ℃
Power Dissipation (Max)20000 mW
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PD57006 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusUnknown
PackagingTube
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PD57006 Documents

PD57006 Datasheet
ST Microelectronics
22 Pages / 0.53 MByte
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