| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 945 MHz |
| Number of Pins | 3 Pin |
| Current Rating | 1 A |
| Case/Package | PowerSO-10RF |
| Power Dissipation | 20 W |
| Breakdown Voltage (Drain to Source) | 65 V |
| Output Power | 6 W |
| Gain | 15 dB |
| Test Current | 70 mA |
| Input Capacitance (Ciss) | 27pF @28V(Vds) |
| Operating Temperature (Max) | 165 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 20000 mW |
| Voltage Rating | 65 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 7.5 mm |
| Size-Width | 9.4 mm |
| Size-Height | 3.5 mm |
Amplifying and switching electronic signals in radio frequency environments is easy with this PD57006S-E RF amplifier from STMicroelectronics. Its maximum power dissipation is 20000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. Its maximum frequency is 945 MHz. This N channel RF power MOSFET operates in enhancement mode.
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