| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 945 MHz |
| Number of Pins | 3 Pin |
| Case/Package | PowerSO-10RF |
| Power Dissipation | 20000 mW |
| Drain to Source Voltage (Vds) | 65 V |
| Output Power | 6 W |
| Gain | 15 dB |
| Test Current | 70 mA |
| Input Capacitance (Ciss) | 27pF @28V(Vds) |
| Operating Temperature (Max) | 165 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 20000 mW |
| Voltage Rating | 65 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -65℃ ~ 165℃ |
The most common usage for this PD57006TR-E RF MOSTFET from STMicroelectronics is in this power amplification mode. Its maximum power dissipation is 20000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. Its maximum frequency is 945 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. This N channel RF power MOSFET operates in enhancement mode.
ST Microelectronics
22 Pages / 0.53 MByte
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