TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 945 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 65.0 V |
Current Rating | 4 A |
Case/Package | PowerSO-10RF |
Power Dissipation | 52.8 W |
Input Capacitance | 57 pF |
Drain to Source Voltage (Vds) | 65.0 V |
Continuous Drain Current (Ids) | 4.00 A |
Output Power | 30 W |
Gain | 14 dB |
Test Current | 50 mA |
Input Capacitance (Ciss) | 57pF @28V(Vds) |
Operating Temperature (Max) | 165 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 52800 mW |
Voltage Rating | 65 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -65℃ ~ 165℃ |
Implement a switching capability into your circuit design with this PD57030-E RF amplifier from STMicroelectronics. Its maximum power dissipation is 52800 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.
ST Microelectronics
18 Pages / 0.49 MByte
ST Microelectronics
1 Pages / 0.14 MByte
ST Microelectronics
FET RF 65V 945MHz PWRSO-10
ST Microelectronics
Transistor: N-MOSFET; unipolar; RF; 65V; 4A; 52.8W; SO10RF; SMT; 14dB
ST Microelectronics
Trans RF MOSFET N-CH 65V 4A 3Pin PowerSO-10RF (Formed lead) Tube
ST Microelectronics
FET RF 65V 945MHz PWRSO-10
ETC1
HF to 2000MHz Class AB Common Source - PowerSO-10RF
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.