| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 870 MHz |
| Number of Pins | 3 Pin |
| Current Rating | 2 A |
| Case/Package | SOT-89 |
| Number of Positions | 3 Position |
| Power Dissipation | 6 W |
| Drain to Source Voltage (Vds) | 25 V |
| Breakdown Voltage (Drain to Source) | 25 V |
| Output Power | 2 W |
| Gain | 15 dB |
| Test Current | 100 mA |
| Input Capacitance (Ciss) | 16pF @7.5V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 6000 mW |
| Voltage Rating | 25 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -65℃ ~ 150℃ |
The PD84002 is a 25V N-channel Enhancement Mode Lateral Field Effect RF Power Transistor designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. Its superior gain and efficiency makes it an ideal solution for portable radio and UHF RFID reader.
● Excellent thermal stability
● Common source configuration
● ESD protection
● High peak power
● High ruggedness capability
●ESD sensitive device, take proper precaution while handling the device.
ST Microelectronics
16 Pages / 0.56 MByte
ST Microelectronics
8 Pages / 0.21 MByte
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1 Pages / 0.14 MByte
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