TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 120 MHz |
Number of Pins | 4 Pin |
Voltage Rating (DC) | -140 V |
Current Rating | -3.00 A |
Case/Package | SOT-89-3 |
Polarity | PNP |
Power Dissipation | 2100 mW |
Breakdown Voltage (Collector to Emitter) | 140 V |
Continuous Collector Current | 3A |
hFE Min | 100 @1A, 5V |
hFE Max | 100 |
Input Power (Max) | 2.1 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2100 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 4.6 mm |
Size-Width | 2.6 mm |
Size-Height | 1.6 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Implement this PNP ZX5T955ZTA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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Trans GP BJT PNP 140V 4A 3000mW Automotive 4Pin(3+Tab) SOT-223 T/R
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