| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 870 MHz |
| Number of Pins | 3 Pin |
| Current Rating | 2 A |
| Case/Package | SOT-89 |
| Number of Positions | 3 Position |
| Power Dissipation | 6 W |
| Drain to Source Voltage (Vds) | 40 V |
| Output Power | 4 W |
| Gain | 17 dB |
| Test Current | 50 mA |
| Input Capacitance (Ciss) | 16pF @13.6V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 6000 mW |
| Voltage Rating | 40 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.6 mm |
| Size-Width | 2.6 mm |
| Size-Height | 0.44 mm |
| Operating Temperature | -65℃ ~ 150℃ |
If you need a MOSFET for radio frequency environments, STMicroelectronics offers this PD85004 RF amplifier that amplifies and switches between electronic signals. Its maximum power dissipation is 6000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This RF power MOSFET has an operating temperature range of -65 °C to 150 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
ST Microelectronics
18 Pages / 0.63 MByte
ST Microelectronics
8 Pages / 0.21 MByte
ST Microelectronics
1 Pages / 0.14 MByte
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