| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 5 Pin |
| Case/Package | SOT-669 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.0023 Ω |
| Power Dissipation | 62.5 W |
| Threshold Voltage | 700 mV |
| Input Capacitance | 6150 pF |
| Drain to Source Voltage (Vds) | 25 V |
| Rise Time | 80 ns |
| Input Capacitance (Ciss) | 6150pF @10V(Vds) |
| Input Power (Max) | 62.5 W |
| Fall Time | 114 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 62.5W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PH2925U is a N-channel enhancement-mode ultra-low level FET in a plastic package using TrenchMOS® technology. It is designed and qualified for use in DC-to-DC convertors and switched-mode power supply applications.
● Higher operating power due to low thermal resistance
● Low conduction losses due to low ON-state resistance
● Interfaces directly with low voltage gate drivers
● -55 to 150°C Junction temperature range
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