PHE13005,127 Datasheet PDF - We En Semiconductor

Manufacturer:	We En Semiconductor
Category:	BJTs
Case Package:	TO-220-3
Description:	TO-220AB NPN 400V 4A
Documentation:	PHE13005,127 Datasheet (13 Pages)Pinout Diagram on3 PageHot Package Outline Dimension on10 Page Part Numbering System on3 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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PHE13005,127 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	75 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	75 W
Breakdown Voltage (Collector to Emitter)	400 V
Continuous Collector Current	4A
hFE Min	10 @2A, 5V
Input Power (Max)	75 W
DC Current Gain (hFE)	10
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	75000 mW