Part Datasheet Search > BJTs > We En Semiconductor > PHE13009,127 Datasheet PDF
PHE13009,127
Price from AiPCBA

PHE13009,127 Datasheet PDF - We En Semiconductor

Manufacturer:We En Semiconductor
Category:BJTs
Case Package:TO-220-3
Description:TO-220AB NPN 400V 12A
Documentation:PHE13009,127 Datasheet (8 Pages)Pinout Diagram on2 PageHot
Pictures:
Symbol
Footprint
Pinout
Product Pictures
PHE13009,127 Datasheet PDF (8 Pages)
View Datasheet
Click page to view the detail

PHE13009,127 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-220-3
PolarityNPN
Power Dissipation80 W
Breakdown Voltage (Collector to Emitter)400 V
Continuous Collector Current12A
hFE Min8 @5A, 5V
hFE Max40
Input Power (Max)80 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-65 ℃
Power Dissipation (Max)80000 mW
View Datasheet >

PHE13009,127 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
MaterialSilicon
Size-Length10.3 mm
Size-Width4.7 mm
Size-Height9.4 mm
Operating Temperature-65℃ ~ 150℃
View Datasheet >

PHE13009,127 Documents

PHE13009,127 Datasheet
We En Semiconductor
8 Pages / 0.12 MByte
PHE13009,127 Other Datasheet PDF
We En Semiconductor
22 Pages / 0.32 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.

Relate Parts

 Privacy Statementsupport@adatasheet.com
CopyRight © 2015-2024 ADatasheet