| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.08 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 2.40 A |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 250pF @20V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.45 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The PHN210T,118 is an intermediate level N-channel enhancement-mode FET in a plastic package using vertical TrenchMOS technology. It is designed and qualified for use in computing, DC-to-DC converters, logic level translators, motor and relay driver applications.
● Suitable for high frequency applications due to fast switching characteristics
● Suitable for logic level gate drive sources
● Suitable for low gate drive sources
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