| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-223 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 90 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 8.3 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 100 V |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
The PHT6NQ10T is a 100V standard level N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS technology. Low conduction losses due to low on-state resistance and higher operating power due to low thermal resistance. Suitable for use in DC to DC converters, motor and relay drivers applications.
● 150°C Junction temperature
● Suitable for high frequency applications due to fast switching characteristics
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