TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 300 mW |
Breakdown Voltage (Collector to Emitter) | 150 V |
Continuous Collector Current | 1A |
hFE Min | 100 |
DC Current Gain (hFE) | 220 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Cut Tape (CT) |
Size-Length | 3 mm |
Size-Width | 1.4 mm |
Size-Height | 1.1 mm |
The PBHV9115T is a 1A PNP breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package.
● High voltage
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● AEC-Q101 qualified
● NPN complement is PBHV8115T
● W7 Marking code
Nexperia
PBHV9115TLH - 150V, 1A PNP high-voltage low VCEsat BISS transistor
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