| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | SOT-1118 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.03 Ω |
| Polarity | N-Channel |
| Power Dissipation | 510 mW |
| Threshold Voltage | 700 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
The PMDPB28UN is a dual N-channel enhancement-mode FET in a small and leadless ultra thin surface-mount plastic package using Trench MOSFET technology. It is suitable for DC-to-DC converters and small brushless DC motor drive applications.
● Very fast switching characteristics
● Exposed drain pad for excellent thermal conduction
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